Introduction of BSS138WH6327XTSA1

Ⅰ. Product overview of BSS138WH6327XTSA1

The BSS138WH6327XTSA1 is an N-channel small-signal MOSFET from Infineon Technologies. It features a 60 V drain-to-source voltage rating and a compact SOT-323 package, making it suitable for low-power switching, signal control, and level-shifting applications. The device is an enhancement-mode, logic-level MOSFET and is qualified according to AEC-Q101.

Ⅱ. BSS138WH6327XTSA1 Core parameter

Category: Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs

Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 10 V

Mfr: Infineon Technologies

Vgs (Max): ±20V

Series: SIPMOS®

Input Capacitance (Ciss) (Max) @ Vds: 43 pF @ 25 V

Packaging: Tape & Reel (TR) Cut Tape (CT) Digi-Reel®

Power Dissipation (Max): 500mW (Ta)

Part Status: Active

Operating Temperature: -55°C ~ 150°C (TJ)

FET Type: N-Channel

Grade: Automotive

Technology: MOSFET (Metal Oxide)

Qualification: AEC-Q101

Drain to Source Voltage (Vdss): 60 V

Mounting Type: Surface Mount

Current - Continuous Drain (Id) @ 25°C: 280mA (Ta)

Supplier Device Package: PG-SOT323

Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V

Package / Case: SC-70, SOT-323

Rds On (Max) @ Id, Vgs: 3.5Ohm @ 200mA, 10V

Base Product Number: BSS138

Vgs(th) (Max) @ Id: 1.4V @ 26µA                                                                                                                                                   

Ⅲ. BSS138WH6327XTSA1 Main characteristics

N-Channel MOSFET: The BSS138W is an N-channel MOSFET, suitable for controlling current flow in electronic circuits through the gate terminal.

60 V Drain-to-Source Voltage: The device supports a maximum 60 V drain-to-source voltage (VDS), making it suitable for a variety of low-voltage switching circuits.

280 mA Continuous Drain Current: The BSS138W supports a continuous drain current of up to 280 mA at 25°C, making it a small-signal rather than high-power MOSFET.

Logic-Level Operation: The device is designed as a logic-level MOSFET, allowing it to be driven by typical digital control signals in suitable applications.

Enhancement Mode: The MOSFET operates in enhancement mode, meaning the device is normally off and turns on when an appropriate gate-source voltage is applied.

Low Gate Charge: The typical gate charge is around 1 nC at 4.5 V, which helps support fast switching in low-power applications.

 

Ⅳ. BSS138WH6327XTSA1 Application field

Signal Switching: The MOSFET can be used as a small-signal electronic switch for controlling low-current loads.

Logic-Level Translation: N-channel MOSFETs such as the BSS138 are commonly used in suitable bidirectional signal-level translation circuits.

Digital Circuit Control: The device can be controlled by digital logic signals and used for switching or isolating low-power circuit nodes.

LED and Small Load Switching: The device can be used for switching small loads such as indicator LEDs when the electrical conditions are within its ratings.

Automotive Electronics: Its AEC-Q101 qualification allows it to be considered for suitable automotive electronic applications.

Ⅴ. Summary

The BSS138WH6327XTSA1 is an Infineon N-channel small-signal MOSFET with a 60 V VDS rating, 280 mA continuous drain-current capability, logic-level operation, and a compact SOT-323 package. Its automotive qualification and small-signal switching characteristics make it suitable for signal switching, level shifting, and low-power control applications.